As a charge carrier groupie and a min  valence electrons which allows them to act as a donor substitution at these items the silicon creates an extra free electron therefore silicon crystal dealt with pool on creates a p-type semiconductor NO2 Maximus whereas one doped with false press results in an n-type material during manufacture opens can be diffused into the semiconductor body by contact with gaseous compound at the desired element Orion implantation can be used to accurately position they don't.

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